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j une 2016 docid025318 rev 4 1 / 22 this is information on a product in full production. www.st.com STD5N60M2, stp5n60m2, stu5n60m2 n - channel 600 v, 1.3 typ., 3.5 a mdmesh? m2 power mosfet in dpak, to - 220 and ipak packages datasheet - production data figure 1 : internal schematic diagram features order code v ds @ t jmax r ds(on) max. i d STD5N60M2 650 v 1.4 3.5 a stp5n60m2 stu5n60m2 ? extremely low gate charge ? excellent output capacitance (c oss ) profile ? 100% avalanche tested ? zener - protected applications ? switching applications description these devices are n - channel power mosfet s developed using mdmesh? m2 technology. thanks to their strip layout and improved vertical structure, these devices exhibit low on - resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converter s. table 1: device summary order code marking package packing STD5N60M2 5n60m2 dpak tape and reel stp5n60m2 to - 220 tube stu5n60m2 ipak
contents STD5N60M2, stp5n60m2, stu5n60m2 2 / 22 docid025318 rev 4 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteri stics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ..................... 9 4 package information ................................ ................................ ..... 10 4.1 dpak (to - 252) type a package information ................................ ... 10 4.2 dpak to - 252 type c package information ................................ ..... 12 4.3 dpak (to - 252) packing information ................................ ............... 15 4.4 to - 220 type a package information ................................ ................ 17 4.5 ipak (to - 251) type c package information ................................ ... 19 5 revisio n history ................................ ................................ ............ 21
STD5N60M2, stp5n60m2, stu5n60m2 electrical ratings docid025318 rev 4 3 / 22 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v gs gate - source voltage 25 v i d drain current (continuous) at t c = 25 c 3.5 a drain current (continuous) at t c = 100 c 2.2 i dm (1) drain current (pulsed) 14 a p tot total dissipation at t c = 25 c 45 w dv/dt (2) peak diode recovery voltage slope 15 v/ns dv/dt (3) mosfet dv/dt ruggedness 50 t stg storage temperature range - 55 to 150 c t j operating junction temperature range notes: (1) pulse width limited by safe operating area. (2) i sd 3.5 a, di/dt 400 a/s; v ds peak < v (br)dss , v dd = 400 v. (3) v ds 480 v. table 3: thermal data symbol parameter value unit dpak to - 220 ipak r thj - case thermal resistance junction - case max. 2.8 c/w r thj - pcb thermal resistance junction - pcb max. (1) 50 r thj - amb thermal resistance junction - ambient max. 62.5 100 notes: (1) when mounted on 1 inch2 fr - 4, 2 oz copper board. table 4: avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by t jmax ) 0.5 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar ; v dd = 50 v) 80 mj
electrical characteristics STD5N60M2, stp5n60m2, stu5n60m2 4 / 22 docid025318 rev 4 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5: on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0 v, i d = 1 ma 600 v i dss zero gate voltage drain current v gs = 0 v, v ds = 600 v 1 a v gs = 0 v, v ds = 600 v, t c = 125 c (1) 100 i gss gate - body leakage current v ds = 0 v, v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 1.7 a 1.3 1.4 notes: (1) defined by design, not subject to production test. table 6: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 v - 211 - pf c oss output capacitance - 13 - c rss reverse transfer capacitance - 0.75 - c oss eq. (1) equivalent output capacitance v ds = 0 to 480 v, v gs = 0 v - 19.5 - pf r g intrinsic gate resistance f = 1 mhz open drain - 6.2 - q g total gate charge v dd = 480 v, i d = 3.5 a, v gs = 10 v (see figure 17: "test circuit for gate charge behavior" ) - 8 - nc q gs gate - source charge - 1.6 - q gd gate - drain charge - 4.4 - notes: (1) c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . table 7: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 300 v, i d = 1.7 a r g = 4.7 , v gs = 10 v (see figure 16: "test circuit for resistive load switching times" and figure 21: "switching time waveform" ) - 12 - ns t r rise time - 3 - t d(off) turn - off delay time - 70 - t f fall time - 15 -
STD5N60M2, stp5n60m2, stu5n60m2 electrical characteristics docid025318 rev 4 5 / 22 table 8: source - drain diode symbol parameter test conditions min. typ. max. unit i sd source - drain current - 3.5 a i sdm (1) source - drain current (pulsed) - 14 a v sd (2) forward on voltage v gs = 0 v, i sd = 3.5 a - 1.6 v t rr reverse recovery time i sd = 3.5 a, di/dt = 100 a/s, v dd = 60 v (see figure 18: "test circuit for inductive load switching and diode recovery times" ) - 220 ns q rr reverse recovery charge - 1.05 c i rrm reverse recovery current - 9.5 a t rr reverse recovery time i sd = 3.5 a, di/dt = 100 a/s, v dd = 60 v, t j = 150 c (see figure 18: "test circuit for inductive load switching and diode recovery times" ) - 314 ns q rr reverse recovery charge - 1.5 c i rrm reverse recovery current - 9.5 a notes: (1) pulse width is limited by safe operating area. (2) pulse test: pulse duration = 300 s, duty cycle 1.5 %.
electrical characteristics STD5N60M2, stp5n60m2, stu5n60m2 6 / 22 docid025318 rev 4 2.1 electrical characteristics (curves) figure 2 : safe operating area for dpak and ipak figure 3 : thermal impedance for dpak and ipak figure 4 : safe operating area for to - 220 figure 5 : thermal impedance for to - 220 figure 6 : output characteristics figure 7 : transfer characteristics k cg34360 c 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -5 10 -1 10 -2 10 0
STD5N60M2, stp5n60m2, stu5n60m2 electrical characteristics docid025318 rev 4 7 / 22 figure 8 : gate charge vs gate - source voltage figure 9 : static drain - source on - resistance figure 10 : capacitance variations figure 11 : output capacitance stored energy figure 12 : normalized gate threshold voltage vs temperature figure 13 : normalized on - resistance vs temperature
electrical characteristics STD5N60M2, stp5n60m2, stu5n60m2 8 / 22 docid025318 rev 4 figure 14 : normalized v (br)dss vs temperature figure 15 : source - drain diode forward characteristics
STD5N60M2, stp5n60m2, stu5n60m2 test circuits docid025318 rev 4 9 / 22 3 test circuits figure 16 : test circuit for resistive load switching times figure 17 : test circuit for gate charge behavior figure 18 : test circuit for inductive load switching and diode recovery times figure 19 : unclamped inductive load test circuit figure 20 : unclamped inductive waveform figure 21 : switching time waveform
package information STD5N60M2, stp5n60m2, stu5n60m2 10 / 22 docid025318 rev 4 4 package information in order to meet environmental requirements, st offers these devices in different grades of ec opack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 4.1 dpak (to - 252) type a package information figure 22 : dpak (to - 252) type a package outline 0068772_a_21
STD5N60M2, stp5n60m2, stu5n60m2 package information docid025318 rev 4 11 / 22 table 9: dpak (to - 252) type a mechanical data dim. mm min. typ. max. a 2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 d1 4.95 5.10 5.25 e 6.40 6.60 e1 4.60 4.70 4.80 e 2.16 2.28 2.40 e1 4.40 4.60 h 9.35 10.10 l 1.00 1.50 (l1) 2.60 2.80 3.00 l2 0.65 0.80 0.95 l4 0.60 1.00 r 0.20 v2 0 8
package information STD5N60M2, stp5n60m2, stu5n60m2 12 / 22 docid025318 rev 4 4.2 dpak to - 252 type c package information figure 23 : dpak (to - 252) type c package outline 0068772_c_21
STD5N60M2, stp5n60m2, stu5n60m2 package information docid025318 rev 4 13 / 22 table 10: dpak (to - 252) type c mechanical data dim. mm min. typ. max. a 2.20 2.30 2.38 a1 0.90 1.01 1.10 a2 0.00 0.10 b 0.72 0.85 b4 5.13 5.33 5.46 c 0.47 0.60 c2 0.47 0.60 d 6.00 6.10 6.20 d1 5.25 e 6.50 6.60 6.70 e1 4.70 e 2.186 2.286 2.386 h 9.80 10.10 10.40 l 1.40 1.50 1.70 l1 2.90 ref l2 0.90 1.25 l3 0.51 bsc l4 0.60 0.80 1.00 l6 1.80 bsc 1 5 7 9 2 5 7 9 v2 0 8
package information STD5N60M2, stp5n60m2, stu5n60m2 14 / 22 docid025318 rev 4 figure 24 : dpak (to - 252) recommended footprint (dimensions are in mm) fp_0068772_21
STD5N60M2, stp5n60m2, stu5n60m2 package information docid025318 rev 4 15 / 22 4.3 dpak (to - 252) packing information figure 25 5 : dpak (to - 252) tape outline
package information STD5N60M2, stp5n60m2, stu5n60m2 16 / 22 docid025318 rev 4 figure 26 6 : dpak (to - 252) reel outline table 11: dpak (to - 252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r 40 t 0.25 0.35 w 15.7 16.3
STD5N60M2, stp5n60m2, stu5n60m2 package information docid025318 rev 4 17 / 22 4.4 to - 220 type a package information figure 27 7 : to - 220 type a package outline
package information STD5N60M2, stp5n60m2, stu5n60m2 18 / 22 docid025318 rev 4 table 12: to - 220 type a mechanical data dim. mm min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 d 15.25 15.75 d1 1.27 e 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l 13.00 14.00 l1 3.50 3.93 l20 16.40 l30 28.90 ?p 3.75 3.85 q 2.65 2.95
STD5N60M2, stp5n60m2, stu5n60m2 package information docid025318 rev 4 19 / 22 4.5 ipak (to - 251) type c package information figure 28 8 : ipak (to - 251) type c package outline 0068771_ik_typec_rev14
package information STD5N60M2, stp5n60m2, stu5n60m2 20 / 22 docid025318 rev 4 table 13: ipak (to - 251) type c package mechanical data dim. mm min. typ. max. a 2.20 2.30 2.35 a1 0.90 1.00 1.10 b 0.66 0.79 b2 0.90 b4 5.23 5.33 5.43 c 0.46 0.59 c2 0.46 0.59 d 6.00 6.10 6.20 d1 5.20 5.37 5.55 e 6.50 6.60 6.70 e1 4.60 4.78 4.95 e 2.20 2.25 2.30 e1 4.40 4.50 4.60 h 16.18 16.48 16.78 l 9.00 9.30 9.60 l1 0.90 1.00 1.20 l2 0.90 1.08 1.25 1 3 5 7 2 1 3 5
STD5N60M2, stp5n60m2, stu5n60m2 revision history docid025318 rev 4 21 / 22 5 revision history table 14: document revision history date revision changes 30 - sep - 2013 1 first release. 20 - mar - 2014 2 C modified: id, idm and note 2 values in table 2 C modified: the entire values in table 4 C modified: rds(on) typical and id values in table 5 C modified: the entire typical values, isd and isdm in table 6, 7 and 8 C updated: section 4.1: dpak, STD5N60M2 C minor text changes 08 - jun - 2016 3 updated title, features, applications and description in cover page. updated section 1: "electrical ratings", table 6: "dynamic" and section 2.1: "electrical characteristics (curves)". updated ipak c minor text changes 16 - jun - 2016 4 updated figure 1: "internal schematic diagram" . updated table 7: "switching times" and table 8: "source - drain diode" . minor text changes.
STD5N60M2, stp5n60m2, stu5n60m2 22 / 22 docid025318 rev 4 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and s t assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information se t forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2016 stmicroelectronics C all rights reserved

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